Semiconductor Group 1 Jul-30-1996
BUP 314D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 314D 1200V 42A TO-218 AB Q67040-A4226-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current, (limited by bond wire)
T
C
= 60 °C
T
C
= 90 °C
I
C
33
42
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
I
Cpuls
66
84
Diode forward current
T
C
= 90 °C
I
F
28
Pulsed diode current, t
p
= 1 ms
T
C
= 25 °C
I
Fpuls
168
Power dissipation
T
C
= 25 °C
P
tot
300
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150