Semiconductor Group 1 Dec-02-1996
BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 305 D 1200V 12A TO-218 AB Q67040-A4225-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 90 °C
I
C
8
12
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
I
Cpuls
16
24
Diode forward current
T
C
= 90 °C
I
F
8
Pulsed diode current, t
p
= 1 ms
T
C
= 25 °C
I
Fpuls
48
Power dissipation
T
C
= 25 °C
P
tot
100
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150