BULT118
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
APPLICATIONS:
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
n FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.

INTERNAL SCHEMATIC DIAGRAM
June 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC =0) 9 V
IC Collector Current 2 A
I
CM
Collector Peak Current (t
p
<5ms) 4 A
I
B
Base Current 1 A
I
BM
Base Peak Current (t
p
<5ms) 2 A
P
tot
Total Dissipation at T
c
=25
o
C45W
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
3
2
1
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