Semiconductor Group 1 May-05-1997
BUP 212
IGBT
• Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 212 1200V 22A TO-220 AB Q67040-A . . . . .
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Emitter-collector voltage V
EC
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 110 °C
I
C
8
22
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 110 °C
I
Cpuls
16
44
Avalanche energy, single pulse
I
C
= 8 A, V
CC
= 50 V, R
GE
= 25 Ω
L = 300 µH, T
j
= 25 °C
E
AS
10
mJ
Power dissipation
T
C
= 25 °C
P
tot
125
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150
Infineon
Q67040-A4408