BULT118D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n NPN TRANSISTOR
n INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
APPLICATIONS:
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
n FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
=0) 9 V
I
C
Collector Current 2 A
ICM Collector Peak Current (tp <5ms) 4 A
IB Base Current 1 A
IBM Base Peak Current (tp <5ms) 2 A
P
tot
Total Dissipation at T
c
=25
o
C45W
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
3
2
1
SOT-32
1/7