BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
PRODUCT INFORMATION
1
MAY 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed Specifically for High Frequency
Electronic Ballasts
a71 Integrated Fast trr Anti-Parallel Diode,
Enhancing Reliability
a71 Diode trr Typically 1 µs
a71 Tightly Controlled Transistor Storage Times
a71 Voltage Matched Integrated Transistor and
Diode
a71 Characteristics Optimised for Cool Running
a71 Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
descriptio n
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast trr anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
device symbo l
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
B
C
E
NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (VBE = 0) VCES 600 V
Collector-base voltage (IE = 0) VCBO 600 V
Collector-emitter voltage (IB = 0) VCEO 400 V
Emitter-base voltage VEBO 9 V
Continuous collector current IC 6 A
Peak collector current (see Note 1) ICM 8 A
Continuous base current IB 2 A
Peak base current (see Note 1) IBM 4 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 70 W
Maximum average continuous diode forward current at (or below) 25°C case temperature IE(av) 0.5 A
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C