EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BUL89

器件描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
器件厂商:STMICROELECTRONICS [STMicroelectronics]
厂商主页:http://www.st.com/
文件大小:70.6KB,共6页
Sponsor by e络盟
器件资料摘要:
BUL89
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n LOW BASE-DRIVE REQUIREMENTS
n VERY HIGH SWITCHING SPEED
n FULLY CHARACTERIZED AT 125
o
C
APPLICATIONS
n ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
n SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.

INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 850 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC =0) 9 V
IC Collector Current 12 A
ICM Collector Peak Current (tp <5ms) 25 A
IB Base Current 6 A
I
BM
Base Peak Current (t
p
<5ms) 12 A
P
tot
Total Dissipation at T
c
=25
o
C 110 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
1/6