BUL770
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
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JULY 1991 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
a71 hFE 7 to 21 at VCE = 1 V, IC = 800 mA
a71 Low Power Losses (On-state and Switching)
a71 Key Parameters Characterised at High
Temperature
a71 Tight and Reproducible Parametric
Distributions

NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for tp = 300 µs, duty cycle ≤ 2%.

absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (VBE = 0) VCES 700 V
Collector-base voltage (IE = 0) VCBO 700 V
Collector-emitter voltage (IB = 0) VCEO 400 V
Emitter-base voltage VEBO 9 V
Continuous collector current IC 2.5 A
Peak collector current (see Note 1) ICM 6 A
Peak collector current (see Note 2) ICM 8 A
Continuous base current IB 1.5 A
Peak base current (see Note 2) IBM 2.5 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 50 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
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