BUL68B
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
Designed for use in
electronic ballast applications
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
V
CBO
Collector – Base Voltage(I
E
=0)
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
200V
100V
10V
12A
17A
5A
20W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
5.97 (0.235)
6.22 (0.245)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
8.89 (0.350)
9.78 (0.385)
1.09 (0.043)
1.30 (0.051)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
123
I-PAK(TO251)
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)