BUL510
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n VERY HIGH SWITCHING SPEED
n FULLY CHARACTERISED AT 125
o
C
APPLICATIONS
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
n SWITCH MODE POWER SUPPLIES
n ELECTRONIC TRANSFORMER FOR
HALOGEN LAMP
DESCRIPTION
The BUL510 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1000 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 450 V
V
EBO
Emitter-Base Voltage (I
C
=0) 9 V
IC Collector Current 10 A
ICM Collector Peak Current (tp <5ms) 18 A
I
B
Base Current 3.5 A
IBM Base Peak Current (tp <5ms) 7 A
P
tot
Total Dissipation at T
c
=25
o
C 100 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
1/6