Prelim. 4/99
BUL49A
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
R
th
Thermal Resistance (junction-case)
600V
300V
10V
25A
40A
200W
–65 to 175°C
Max. 0.7°CW
MECHANICAL DATA
Dimensions in mm
40.01 (1.575)
Max.
4.47 (0.176)
Rad.
2 Pls.
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
11.18 (0.44)
1.63 (0.064)
1.52 (0.060)
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
16.97 (0.668)
16.87 (0.664)
4.09 (0.161)
3.84 (0.151)
2 Pls
11.18 (0.440)
10.67 (0.420)
26.67
(1.050)
Max.
2
1
Pin 1 – Base
TO3
Pin 2 – Emitter Case is Collector
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)