BUL52B
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Designed for use in
electronic ballast applications
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
800V
400V
10V
8A
12A
4A
100W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
123
15
.
1
10.2
6.
3
4.5
1.3
3.6 Dia.
1.3
18.
0
14.
0
0.85
2.54
0.5
2.54
Pin 1 – Base
TO220
Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)