BUL50A
器件描述：ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
器件厂商：SEME-LAB [Seme LAB]
文件大小：29.2KB，共2页
Sponsor by e络盟器件资料摘要：
Prelim. 3/95
LAB
SEME
BUL50A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
1000V
500V
10V
15A
30A
5A
125W
–55 to +175°C
MECHANICAL DATA
Dimensions in mm (inches)
1 32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
8
0 (
0
.
8
1
9
)
21.
4
6 (
0
.
8
4
5
)
6.
15
(0
.
2
4
2
)
BS
C
19.
8
1 (
0
.
7
8
0
)
20.
3
2 (
0
.
8
0
0
)
4.
50
(0
.
1
7
7
)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
5.5
11
1.15
0.95
13.6
min
4.25
4.15
Dia.
4.4
15.2
max
14 2.0
4.6
max
12.7
max
21.0
max
0.4
1.6
132
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Pin 1 – Base
TO–247
Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unlessotherwise stated)
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
Pin 1 – Base
SOT93
Pad 2 – Collector Pad 3 – Emitter
LAB
SEME
BUL50A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Operating and Storage Temperature Range
1000V
500V
10V
15A
30A
5A
125W
–55 to +175°C
MECHANICAL DATA
Dimensions in mm (inches)
1 32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
8
0 (
0
.
8
1
9
)
21.
4
6 (
0
.
8
4
5
)
6.
15
(0
.
2
4
2
)
BS
C
19.
8
1 (
0
.
7
8
0
)
20.
3
2 (
0
.
8
0
0
)
4.
50
(0
.
1
7
7
)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
5.5
11
1.15
0.95
13.6
min
4.25
4.15
Dia.
4.4
15.2
max
14 2.0
4.6
max
12.7
max
21.0
max
0.4
1.6
132
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Pin 1 – Base
TO–247
Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unlessotherwise stated)
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
Pin 1 – Base
SOT93
Pad 2 – Collector Pad 3 – Emitter