1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0072C0105C0103C0104 C0083C0112C0101C0101C0100C0044 C0072C0105C0103C0104 C0071C0097C0105C0110 C0066C0105C0112C0111C0108C0097C0114
C0078C0080C0078 C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114 C0119C0105C0116C0104
C0073C0110C0116C0101C0103C0114C0097C0116C0101C0100 C0067C0111C0108C0108C0101C0099C0116C0111C0114C0045C0069C0109C0105C0116C0116C0101C0114
C0068C0105C0111C0100C0101 C0097C0110C0100 C0066C0117C0105C0108C0116C0045C0105C0110 C0069C0102C0102C0105C0099C0105C0101C0110C0116
C0065C0110C0116C0105C0115C0097C0116C0117C0114C0097C0116C0105C0111C0110 C0078C0101C0116C0119C0111C0114C0107
The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an h
FE
window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I
C
= 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎÎÎ
400
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Breakdown Voltage
ÎÎÎÎÎÎÎ
V
CBO
ÎÎÎÎÎÎÎÎ
700
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎ
V
CES
ÎÎÎÎÎÎÎÎ
700
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎÎ
V
EBO
ÎÎÎÎÎÎÎÎ
12
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
5
10
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎÎÎ
2
4
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Total Device Dissipation @ T
C
= 25C0095C
*Derate above 25°C
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
75
0.6
ÎÎÎÎ
ÎÎÎÎ
Watt
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Temperature
ÎÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎÎ
–65 to 150
ÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance
— Junction to Case
— Junction to Ambient
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
R
θJC
R
θJA
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
1.65
62.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
T
L
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
260
ÎÎÎÎ
ÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45D2/D
 Motorola, Inc. 1995
C0066C0085C0076C0052C0053C0068C0050
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
CASE 221A–06
TO–220AB