1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL44F, Case 221D, is UL Recognized to 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating Symbol BUL44 BUL44F Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9.0 Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
2.0
5.0
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
1.0
2.0
Adc
RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b
T
C
= 25°C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (T
C
= 25°C)
Derate above 25°C
P
D
50
0.4
25
0.2
Watts
W/°C
Operating and Storage Temperature T
J
, T
stg
– 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH) V
CEO(sus)
400 — — Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0) I
CEO
— — 100 µAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
(T
C
= 125°C)
Collector Cutoff Current (V
CE
= 500 V, V
EB
= 0) (T
C
= 125°C)
I
CES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0) I
EBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44/D
 Motorola, Inc. 1995
C0066C0085C0076C0052C0052
C0066C0085C0076C0052C0052C0070
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
*Motorola Preferred Device
BUL44
CASE 221A–06
TO–220AB
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
C0042
C0042
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