1/6August 2002
BUL312FH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
c132 HIGH VOLTAGE CAPABILITY
c132 LOW SPREAD OF DYNAMIC PARAMETERS
c132 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
c132 VERY HIGH SWITCHING SPEED
c132 FULLY CHARACTERIZED AT 125 °C
c132 LARGE R.B.S.O.A.
c132 FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
c132 HORIZONTAL DEFLECTION FOR COLOR TV
c132 SWITCH MODE POWER SUPPLIES
c132 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.
ABSOLUTE MAXIMUM RATINGS
Ordering Code Marking Shipment
BUL312FH BUL312FH Tube
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1150 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 500 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9V
I
C
Collector Current 5 A
I
CM
Collector Peak Current (t
p
< 5 ms) 10 A
I
B
Base Current 3 A
I
BM
Base Peak Current (t
p
< 5 ms) 4A
P
tot
Total Dissipation at T
c
= 25 °C 36 W
V
isol
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
2500 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220FH
INTERNAL SCHEMATIC DIAGRAM