BUL310
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n STMicroelectronics PREFERRED
SALESTYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
n FULLY CHARACTERISED AT 125
o
C
n LARGE RBSOA
APPLICATIONS
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
n FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
January 1999
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1000 V
V
CEO
Collector-Emitter Voltage (IB = 0) 500 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 V
ICM Collector Peak Current (tp <5 ms) 10 A
I
B
Base Current 3 A
IBM Base Peak Current (tp <5 ms) 4 A
P
tot
Total Dissipation at Tc = 25
o
C75W
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
TO-220

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