3–1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL147F, Isolated Case 221D, is UL Recognized to 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating Symbol BUL147 BUL147F Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9.0 Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
8.0
16
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
4.0
8.0
Adc
RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b
T
C
= 25°C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (T
C
= 25°C)
Derate above 25°C
P
D
125
1.0
45
0.36
Watts
W/°C
Operating and Storage Temperature T
J
, T
stg
– 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.0
62.5
2.78
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH) V
CEO(sus)
400 — — Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0) I
CEO
— — 100 µAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
(T
C
= 125°C)
Collector Cutoff Current (V
CE
= 500 V, V
EB
= 0) (T
C
= 125°C)
I
CES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0) I
EBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
 Motorola, Inc. 1995
C0066C0085C0076C0049C0052C0055
C0066C0085C0076C0049C0052C0055C0070
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
*Motorola Preferred Device
BUL147
CASE 221A–06
TO–220AB
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
C0042
C0042
REV 1