BUL138
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n STMicroelectronics PREFERRED
SALESTYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
n FULLY CHARACTERIZED AT 125
o
C
APPLICATIONS
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
n FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
May 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 800 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
=0) 9 V
I
C
Collector Current 5 A
ICM Collector Peak Current (tp <5ms) 10 A
IB Base Current 2 A
IBM Base Peak Current (tp <5ms) 4 A
Ptot Total Dissipation at Tc =25
o
C8W
stg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
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