BUL128FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
APPLICATIONS:
n ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 700 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
=0) 9 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current (t
p
<5ms) 8 A
I
B
Base Current 2 A
IBM Base Peak Current (tp <5ms) 4 A
Ptot Total Dissipation at Tc =25
o
C31W
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220FP
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