Philips Semiconductors Product Specification
Insulated Gate Bipolar Transistor (IGBT) BUK856-800A
GENERAL DESCRIPTION QUICK REFERENCE DATA
Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT
gate bipolar power transistor in a
plastic envelope. V
CE
Collector-emitter voltage 800 V
The device is intended for use in I
C
Collector current (DC) 24 A
motor control, DC/DC and AC/DC P
tot
Total power dissipation 125 W
converters, and in general purpose V
CEsat
Collector-emitter on-state voltage 3.5 V
high frequency switching E
off
Turn-off energy Loss 1.0 mJ
applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CE
Collector-emitter voltage - -5 800 V
V
CGR
Collector-gate voltage R
GE
= 20 kΩ - 800 V
±V
GE
Gate-emitter voltage - - 30 V
I
C
Collector current (DC) T
mb
= 25 ˚C - 24 A
I
C
Collector current (DC) T
mb
= 100 ˚C - 12 A
I
CLM
Collector Current (Clamped T
j
≤ T
jmax.
-40
Inductive Load) V
CL
≤ 500 V
I
CM
Collector current (pulsed peak value, T
j
≤ T
jmax.
-50A
on-state)
P
tot
Total power dissipation T
mb
= 25 ˚C - 125 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction Temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - - 1.0 K/W
R
th j-a
Junction to ambient In free air 60 - K/W
123
tab
c
g
e
March 1993 1 Rev 1.000