Philips Semiconductors Product specification
Insulated Gate Bipolar Transistor BUK856-400 IZ
Protected Logic-Level IGBT
GENERAL DESCRIPTION QUICK REFERENCE DATA
Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT
insulated gate bipolar power
transistor in a plastic envelope, V
(CL)CER
Collector-emitter clamp voltage 370 410 500 V
intended for automotive ignition V
CEsat
Collector-emitter on-state voltage 2.2 V
applications. The device has I
C
Collector current (DC) 20 A
built-in zener diodes providing P
tot
Total power dissipation 100 W
active collector voltage clamping E
CERS
Clamped energy dissipation 300 mJ
and ESD protection up to 2 kV.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CE
Collecter-emitter voltage t
p
≤ 500 µs - 500 V
V
CE
Collector-emitter voltage Continuous -20 50 V
±V
GE
Gate-emitter voltage - - 12 V
I
C
Collector current (DC) T
mb
= 100 ˚C - 10 A
I
C
Collector current (DC) T
mb
= 25 ˚C - 20 A
I
CM
Collector current (pulsed peak value, T
mb
= 25 ˚C; t
p
≤ 10 ms; - 25 A
on-state) V
CE
≤ 15 V
I
CLM
Collector current (clamped inductive 1 kΩ ≤ R
G
≤ 10 kΩ -10A
load)
E
CERS
Clamped turn-off energy T
mb
= 25 ˚C; I
C
= 10 A; R
G
= 1 kΩ; - 300 mJ
(non-repetitive) see Figs. 23,24
E
CERR
1
Clamped turn-off energy (repetitive) T
mb
= 100 ˚C; I
C
= 8 A; R
G
= 1 kΩ; - 125 mJ
f = 50 Hz
E
ECR
1
Reverse avalanche energy I
E
= 1 A; f = 50 Hz - 5 mJ
(repetitive)
P
tot
Total power dissipation T
mb
= 25 ˚C - 125 W
T
stg
Storage temperature - -55 150 ˚C
T
j
Operating Junction Temperature - -40 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model - 2 kV
voltage (100 pF, 1.5 kΩ)
123
tab
c
g
e
1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.
November 1998 1 Rev. 1.400