BUK78150-55A
器件描述：TrenchMOS standard level FET
器件厂商：PHILIPS [Philips Semiconductors]
文件大小：295.23KB，共13页
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BUK78150-55A
TrenchMOS™ standard level FET
Rev. 01 — 30 January 2001 Product specification
c
c
M3D087
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology, featuring very low on-state resistance.
Product availability:
BUK78150-55A in SOT223 (SC-73).
2. Features
a73 TrenchMOS™ technology
a73 Q101 compliant
a73 150 °C rated
a73 Standard level compatible.
3. Applications
a73 Automotive and general purpose power switching:
a78 12 V and 24 V loads
a78 Motors, lamps and solenoids.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT223 (SC-73)
2 drain (d)
3 source (s)
4 drain (d)
4
123
MSB002 - 1Top view
s
d
g
MBB076
TrenchMOS™ standard level FET
Rev. 01 — 30 January 2001 Product specification
c
c
M3D087
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology, featuring very low on-state resistance.
Product availability:
BUK78150-55A in SOT223 (SC-73).
2. Features
a73 TrenchMOS™ technology
a73 Q101 compliant
a73 150 °C rated
a73 Standard level compatible.
3. Applications
a73 Automotive and general purpose power switching:
a78 12 V and 24 V loads
a78 Motors, lamps and solenoids.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT223 (SC-73)
2 drain (d)
3 source (s)
4 drain (d)
4
123
MSB002 - 1Top view
s
d
g
MBB076