BUK7510-55AL
器件描述：N-channel TrenchMOS standard level FET
器件厂商：PHILIPS [Philips Semiconductors]
文件大小：107.04KB，共14页
Sponsor by e络盟器件资料摘要：
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically
optimized for linear operation.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
Rev. 01 — 31 March 2005 Product data sheet
a73 TrenchMOS™ technology a73 Q101 compliant
a73 175 °C rated a73 Stable operation in linear mode.
a73 Automotive systems a73 Repetitive clamped inductive
switching
a73 DC linear motor control a73 12 V and 24 V loads.
a73 E
DS(AL)S
≤ 1.1 J a73 R
DSon
= 8.5 mΩ (typ)
a73 I
D
≤ 75 A a73 P
tot
≤ 300 W.
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT78 (TO-220AB)
SOT404 (D2PAK)
2 drain (D)
3 source (S)
mb mounting base;
connected to drain (D)
12
mb
3
mb
13
2
S
D
G
mbb076
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically
optimized for linear operation.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
Rev. 01 — 31 March 2005 Product data sheet
a73 TrenchMOS™ technology a73 Q101 compliant
a73 175 °C rated a73 Stable operation in linear mode.
a73 Automotive systems a73 Repetitive clamped inductive
switching
a73 DC linear motor control a73 12 V and 24 V loads.
a73 E
DS(AL)S
≤ 1.1 J a73 R
DSon
= 8.5 mΩ (typ)
a73 I
D
≤ 75 A a73 P
tot
≤ 300 W.
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT78 (TO-220AB)
SOT404 (D2PAK)
2 drain (D)
3 source (S)
mb mounting base;
connected to drain (D)
12
mb
3
mb
13
2
S
D
G
mbb076