Philips Semiconductors Product specification
PowerMOS transistor BUK483-60A
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
DS
Drain-source voltage 60 V
mount applications. I
D
Drain current (DC) 3.2 A
The device is intended for use in P
tot
Total power dissipation 1.8 W
automotive and general purpose T
j
Junction temperature 150 ˚C
switching applications. R
DS(ON)
Drain-source on-state 0.10 Ω
resistance; V
GS
= 10 V
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 60 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ -60
±
GS
Gate-source voltage - - 30 V
I
D
Drain current (DC) T
amb
= 25 ˚C - 3.2 A
I
D
Drain current (DC) T
amb
= 100 ˚C - 2.0 A
I
DM
Drain current (pulse peak value) T
amb
= 25 ˚C - 13 A
P
tot
Total power dissipation T
amb
= 25 ˚C - 1.8 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
From junction to solder point
1
Mounted on any PCB - 12 15 K/W
R
th j-amb
From junction to ambient Mounted on PCB of fig.18 - - 70 K/W
4
1 23
d
g
s
1 Temperature measured at solder joint on drain tab.
September 1995 1 Rev 1.200