Philips Semiconductors Product specification
PowerMOS transistor BUK473-100A/B
Isolated version of BUK453-100A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK473 -100A -100B
deviceis intended foruse inSwitched V
DS
Drain-source voltage 100 100 V
Mode Power Supplies (SMPS), I
D
Drain current (DC) 9 8 A
motor control, welding, DC/DC and P
tot
Total power dissipation 25 25 W
AC/DC converters, and in general R
DS(ON)
Drain-source on-state 0.16 0.2 Ω
purpose switching applications. resistance
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 30 V
-100A -100B
I
D
Drain current (DC) T
hs
= 25 ˚C - 9 8 A
I
D
Drain current (DC) T
hs
= 100 ˚C - 5.7 5 A
I
DM
Drain current (pulse peak value) T
hs
= 25 ˚C - 36 32 A
P
tot
Total power dissipation T
hs
= 25 ˚C - 25 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5 K/W
heatsink
R
th j-a
Thermal resistance junction to - 55 - K/W
ambient
123
case
d
g
s
November 1996 1 Rev 1.200