Philips Semiconductors Product specification
PowerMOS transistor BUK456-100A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK456 -100A -100B
The device is intended for use in V
DS
Drain-source voltage 100 100 V
Switched Mode Power Supplies I
D
Drain current (DC) 34 32 A
(SMPS), motor control, welding, P
tot
Total power dissipation 150 150 W
DC/DC and AC/DC converters, and T
j
Junction temperature 175 175 ˚C
in general purpose switching R
DS(ON)
Drain-source on-state 0.057 0.065 Ω
applications. resistance
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 30 V
-100A -100B
I
D
Drain current (DC) T
mb
= 25 ˚C - 34 32 A
I
D
Drain current (DC) T
mb
= 100 ˚C - 24 22 A
I
DM
Drain current (pulse peak value) T
mb
= 25 ˚C - 136 128 A
P
tot
Total power dissipation T
mb
= 25 ˚C - 150 W
T
stg
Storage temperature - - 55 175 ˚C
T
j
Junction temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.0 K/W
mounting base
R
th j-a
Thermal resistance junction to - 60 - K/W
ambient
123
tab
d
g
s
April 1998 1 Rev 1.100