Philips Semiconductors Product specification
PowerMOS transistor BUK444-60H
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. V
DS
Drain-source voltage 60 V
The device is intended for use in I
D
Drain current (DC) 21 A
Automotive applications, Switched P
tot
Total power dissipation 30 W
Mode Power Supplies (SMPS), T
j
Junction temperature 150 ˚C
motor control, welding, DC/DC and R
DS(ON)
Drain-source on-state 38 mΩ
AC/DC converters, and in general resistance
purpose switching applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 60 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ -60
±
GS
Gate-source voltage - - 30 V
I
D
Drain current (DC) T
hs
= 25 ˚C - 21 A
I
D
Drain current (DC) T
hs
= 100 ˚C - 13 A
I
DM
Drain current (pulse peak value) T
hs
= 25 ˚C - 84 A
P
tot
Total power dissipation T
hs
= 25 ˚C - 30 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - 4.17 K/W
heatsink
R
th j-a
Thermal resistance junction to 55 - K/W
ambient
d
g
s
123
case
March 1996 1 Rev 1.000