Philips Semiconductors Product specification
Logic level TOPFET BUK116-50L/S
SMD version of BUK106-50L/S
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 5 pin surface V
DS
Continuous drain source voltage 50 V
mounting plastic envelope, intended I
D
Continuous drain current 50 A
as a general purpose switch for P
tot
Total power dissipation 125 W
automotive systems and other T
j
Continuous junction temperature 150 ˚C
applications. R
DS(ON)
Drain-source on-state resistance
V
IS
= 5 V 35 mΩ
APPLICATIONS V
IS
= 8 V 28 mΩ
General controller for driving SYMBOL PARAMETER NOM. UNIT
lamps
motors V
PSN
Protection supply voltage
solenoids BUK116-50L 5V
heaters BUK116-50S 10 V
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible Fig.1. Elements of the TOPFET.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 flag
3 (connected to mb)
4 protection supply
5 source
Fig. 2. Fig. 3.
mb drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
mb
12 45
3
D
S
I
TOPFET
P
F
P
July 1996 1 Rev 1.000