Philips Semiconductors Product specification
Logic level TOPFET BUK111-50GL
SMD version of BUK112-50GL
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 5 pin plastic SMD V
DS
Continuous drain source voltage 50 V
envelope, intended as a low side I
D
Continuous drain current 12 A
switch for automotive applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance 93 mΩ
SYMBOL PARAMETER NOM. UNIT
V
PS
Protection supply voltage 5 V
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Low operating supply current
Overtemperature protection
Overload protection against
short circuit load with
drain current limiting
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
Off-state detection
of open circuit load
indicated by flag pin
5 V logic compatible input level
Integral input resistors.
ESD protection on all pins
Over voltage clamping
Fig.1. Elements of the TOPFET.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 flag
3 (connected to mb)
4 protection supply
5 source
Fig. 2. Fig. 3.
mb drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
RIG
OC LOAD
DETECT
RIS
mb
12 45
3
D
S
I
TOPFET
P
F
P
September 1996 1 Rev 1.000