Philips Semiconductors Product specification
PowerMOS transistor BUK110-50GL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 3 pin plastic surface V
DS
Continuous drain source voltage 50 V
mount envelope, intended as a I
D
Continuous drain current 45 A
general purpose switch for P
D
Total power dissipation 125 W
automotive systems and other T
j
Continuous junction temperature 150 ˚C
applications. R
DS(ON)
Drain-source on-state resistance 35 mΩ
V
IS
= 5 V
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
13
mb
2
P
D
S
I
TOPFET
June 1996 1 Rev 1.000