Philips Semiconductors Product specification
PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 5 pin plastic V
DS
Continuous drain source voltage 50 V
envelope, intended as a general I
D
Continuous drain current 50 A
purpose switch for automotive P
tot
Total power dissipation 125 W
systems and other applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance
APPLICATIONS V
IS
= 5 V 35 mΩ
V
IS
= 8 V 28 mΩ
General controller for driving
lamps SYMBOL PARAMETER NOM. UNIT
motors
solenoids V
PSN
Protection supply voltage
heaters BUK106-50L 5V
BUK106-50S 10 V
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible Fig.1. Elements of the TOPFET.
PINNING - SOT263 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 flag
3 drain
4 protection supply
5 source Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01. Fig. 3.
tab drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
leadform
tab
12345
263-01
D
S
I
TOPFET
P
F
P
February 1993 1 Rev 1.200