Philips Semiconductors Product specification
PowerMOS transistor BUK102-50DL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 3 pin plastic V
DS
Continuous drain source voltage 50 V
envelope, intended as a general I
D
Continuous drain current 45 A
purpose switch for automotive P
D
Total power dissipation 125 W
systems and other applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance 35 mΩ
APPLICATIONS
I
ISL
Input supply current V
IS
= 5 V 650 µA
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
tab drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
123
tab
P
D
S
I
TOPFET
April 1993 1 Rev 1.100