Philips Semiconductors Product specification
PowerMOS transistor BUK101-50GL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 3 pin plastic V
DS
Continuous drain source voltage 50 V
envelope, intended as a general I
D
Continuous drain current 26 A
purpose switch for automotive P
D
Total power dissipation 75 W
systems and other applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance 60 mΩ
APPLICATIONS V
IS
= 5 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
tab drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
123
tab
P
D
S
I
TOPFET
January 1993 1 Rev 2.600