Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic envelope, intended V
DS
Continuous drain source voltage 50 V
as a general purpose switch for I
D
Continuous drain current 15 A
automotive systems and other P
D
Total power dissipation 40 W
applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance 100 mΩ
APPLICATIONS V
IS
= 10 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
tab drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
123
tab
P
D
S
I
TOPFET
November 1996 1 Rev 1.300