Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1200 V
V
CBO
Collector-base voltage (open emitter) - 1200 V
V
CEO
Collector-emitter voltage (open base) - 525 V
V
EBO
Emitter-base voltage (open collector) 18 - V
I
C
Collector current (DC) - 6 A
I
CM
Collector current peak value - 10 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
V
CEsat
Collector-emitter saturation voltage I
C
= 2 A; I
B
= 0.4 A 0.14 1.0 V
h
FEsat
DC current gain I
C
= 2 A; V
CE
= 5 V 21 25
t
fi
Fall time I
C
= 2.5 A; I
B1
= 0.5 A 140 203 ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 1200 V
V
CEO
Collector to emitter voltage (open base) - 525 V
V
CBO
Collector to base voltage (open emitter) - 1200 V
V
EBO
Emitter-base voltage (open collector) 16 - V
I
C
Collector current (DC) - 6 A
I
CM
Collector current peak value - 10 A
I
B
Base current (DC) - 3 A
I
BM
Base current peak value - 5 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 32 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
123
case
b
c
e
November 1999 1 Rev 1.100