Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ202AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 850 V
V
CBO
Collector-Base voltage (open emitter) - 850 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 2 A
I
CM
Collector current peak value - 3 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 18 W
V
CEsat
Collector-emitter saturation voltage I
C
= 1.0 A;I
B
= 0.2 A - 1.0 V
t
f
Fall time Ic=1A,I
B1
=0.2A,I
B2
=0.2A 88 150 ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 850 V
V
CEO
Collector to emitter voltage (open base) - 450 V
V
CBO
Collector to base voltage (open emitter) - 850 V
I
C
Collector current (DC) - 2 A
I
CM
Collector current peak value - 3 A
I
B
Base current (DC) - 0.75 A
I
BM
Base current peak value - 1 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 18 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 7.2 K/W
R
th j-a
Junction to ambient in free air 55 - K/W
123
case
b
c
e
August 1998 1 Rev 1.000