Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ202A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 850 V
V
CBO
Collector-Base voltage (open emitter) - 850 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 2 A
I
CM
Collector current peak value - 3 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 40 W
V
CEsat
Collector-emitter saturation voltage I
C
= 1.0 A;I
B
= 0.2 A - 1.0 V
t
f
Fall time Ic=1A,I
B1
=0.2A 88 150 ns
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 850 V
V
CEO
Collector to emitter voltage (open base) - 450 V
V
CBO
Collector to base voltage (open emitter) - 850 V
I
C
Collector current (DC) - 2 A
I
CM
Collector current peak value - 3 A
I
B
Base current (DC) - 0.75 A
I
BM
Base current peak value - 1 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 40 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 2.5 K/W
R
th j-a
Junction to ambient in free air 70 - K/W
123
tab
b
c
e
August 1998 1 Rev 1.000