Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use
in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 700 V
V
CBO
Collector-Base voltage (open emitter) - 700 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 1.0 A
I
CM
Collector current peak value - 2.0 A
P
tot
Total power dissipation T
lead
≤ 25 ˚C - 2 W
V
CEsat
Collector-emitter saturation voltage I
C
= 0.75 A;I
B
= 150mA 0.24 1.0 V
h
FE
I
C
= 0.75 A;V
CE
= 5 V 14 20
t
fi
Fall time (Inductive) I
C
= 1.0 A;I
BON
= 200mA 50 70 ns
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 700 V
V
CEO
Collector to emitter voltage (open base) - 400 V
V
CBO
Collector to base voltage (open emitter) - 700 V
I
C
Collector current (DC) - 1.0 A
I
CM
Collector current peak value - 2.0 A
I
B
Base current (DC) - 0.5 A
I
BM
Base current peak value - 1.0 A
P
tot
Total power dissipation T
lead
≤ 25 ˚C - 2 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-lead
Thermal resistance - 60 K/W
junction to lead
R
th j-a
Thermal resistance pcb mounted; lead length = 4mm 150 - K/W
Junction to ambient
b
c
e
321
September 1999 1 Rev 1.000