Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ101AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope
intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 700 V
V
CBO
Collector-Base voltage (open emitter) - 700 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 1.5 A
I
CM
Collector current peak value - 3 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 50 W
V
CEsat
Collector-emitter saturation voltage I
C
= 1.0A;I
B
= 200 mA 0.32 1.0 V
h
FE
I
C
= 1.0A;V
CE
= 5 V 11 14
t
fi
Fall time (Inductive) I
C
= 1.0A,I
BON
= 200mA 50 70 ns
PINNING - SOT533 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 700 V
V
CEO
Collector to emitter voltage (open base) - 400 V
V
CBO
Collector to base voltage (open emitter) - 700 V
I
C
Collector current (DC) - 1.5 A
I
CM
Collector current peak value - 3 A
I
B
Base current (DC) - 0.75 A
I
BM
Base current peak value - 1.5 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 50 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 2.5 K/W
R
th j-a
Junction to ambient in free air 70 - K/W
1
Top view MBK915
23
b
c
e
September 1999 1 Rev 1.000