Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for
use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and
inverters.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 700 V
V
CBO
Collector-Base voltage (open emitter) - 700 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 1.0 A
I
CM
Collector current peak value - 2.0 A
P
tot
Total power dissipation T
sp
≤ 25 ˚C - 6 W
V
CEsat
Collector-emitter saturation voltage I
C
= 0.75 A;I
B
= 150 mA 0.23 1.0 V
h
FE
I
C
= 0.75 A;V
CE
= 5 V 14 20
t
fi
Fall time (Inductive) I
C
= 1.0 A,I
BON
=200 mA 50 70 ns
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 700 V
V
CEO
Collector to emitter voltage (open base) - 400 V
V
CBO
Collector to base voltage (open emitter) - 700 V
I
C
Collector current (DC) - 1.0 A
I
CM
Collector current peak value - 2.0 A
I
B
Base current (DC) - 0.5 A
I
BM
Base current peak value - 1.0 A
P
tot
Total power dissipation T
sp
≤ 25 ˚C - 6 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-sp
Junction to solder point - 20 K/W
R
th j-a
Junction to ambient pcb mounted pad areas as in Fig.
23)
pcb mounted, minimum footprint 70 - K/W
Mounted on 50x34x2mm
aluminium PCB 30 - K/W
4
1 23
b
c
e
September 1999 1 Rev 1.000