BUH2M20AP
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
a73 EXTRA HIGH VOLTAGE CAPABILITY
a73 LOW OUTPUT CAPACITANCE
a73 CHARACTERIZED FOR LINEAR MODE
OPERATION.
APPLICATIONS:
a73 DESIGNED SPECIFICALLY FOR DYNAMIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION
The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
®
INTERNAL SCHEMATIC DIAGRAM
September 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 2000 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 1200 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 30 mA
ICM Collector Peak Current (tp < 5 ms) 40 mA
Ptot Total Dissipation at Tc = 25
o
C20W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
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