1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069 C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110
C0080C0108C0097C0110C0097C0114 C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
The BUH100 has an application specific state–of–art die designed for use in
100 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible
Parametric Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎ
400
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Breakdown Voltage
ÎÎÎÎÎ
V
CBO
ÎÎÎÎÎÎ
700
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage
ÎÎÎÎÎ
V
CES
ÎÎÎÎÎÎ
700
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EBO
ÎÎÎÎÎÎ
10
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎ
10
20
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Base Current — Peak (1) ÎÎÎÎÎ
ÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4
10 ÎÎÎÎÎ
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Total Device Dissipation @ T
C
= 25C0095C
*Derate above 25°C
ÎÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
0.8
ÎÎÎÎÎ
ÎÎÎÎÎ
Watt
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Temperature
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎ
–65 to 150
ÎÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance
— Junction to Case
— Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
R
θJC
R
θJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.25
62.5
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
ÎÎÎÎÎ
ÎÎÎÎÎ
T
L
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
260
ÎÎÎÎÎ
ÎÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH100/D
 Motorola, Inc. 1995
C0066C0085C0072C0049C0048C0048
POWER TRANSISTOR
10 AMPERES
700 VOLTS
100 WATTS
CASE 221A–06
TO–220AB