BUF410
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
n HIGH VOLTAGE CAPABILITY
n VERY HIGH SWITCHING SPEED
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
n SWITCH MODE POWER SUPPLIES
n MOTOR CONTROL
DESCRIPTION
The BUF410 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 450 V
V
EBO
Emitter-Base Voltage (I
C
=0) 7 V
IC Collector Current 15 A
ICM Collector Peak Current (tp <5ms) 30 A
I
B
Base Current 3 A
IBM Base Peak Current (tp <5ms) 4.5 A
P
tot
Total Dissipation at T
c
=25
o
C 125 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max Operation Junction Temperature 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
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