1
Motorola Bipolar Power Transistor Device Data
C0065C0100C0118C0097C0110C0099C0101 C0073C0110C0102C0111C0114C0109C0097C0116C0105C0111C0110
C0072C0105C0103C0104 C0083C0112C0101C0101C0100C0044 C0072C0105C0103C0104 C0071C0097C0105C0110 C0066C0105C0112C0111C0108C0097C0114
C0078C0080C0078 C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114 C0119C0105C0116C0104
C0073C0110C0116C0101C0103C0114C0097C0116C0101C0100 C0067C0111C0108C0108C0101C0099C0116C0111C0114C0045C0069C0109C0105C0116C0116C0101C0114
C0068C0105C0111C0100C0101 C0097C0110C0100 C0066C0117C0105C0108C0116C0045C0105C0110 C0069C0102C0102C0105C0099C0105C0101C0110C0116
C0065C0110C0116C0105C0115C0097C0116C0117C0114C0097C0116C0105C0111C0110 C0078C0101C0116C0119C0111C0114C0107
The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an h
FE
window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I
C
= 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎ
400
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Breakdown Voltage
ÎÎÎÎÎ
V
CBO
ÎÎÎÎÎÎ
700
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage
ÎÎÎÎÎ
V
CES
ÎÎÎÎÎÎ
700
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EBO
ÎÎÎÎÎÎ
12
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎ
2
5
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Base Current — Peak (1) ÎÎÎÎÎ
ÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1
2 ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
*Total Device Dissipation @ T
C
= 25C0095C
*Derate above 25°C
ÎÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
25
0.2
ÎÎÎ
ÎÎÎ
Watt
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Temperature
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎ
–65 to 150
ÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance
— Junction to Case
— Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
R
θJC
R
θJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5
71.4
ÎÎÎ
ÎÎÎ
ÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
ÎÎÎÎÎ
ÎÎÎÎÎ
T
L
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
260
ÎÎÎ
ÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUD44D2/D
 Motorola, Inc. 1995
C0066C0085C0068C0052C0052C0068C0050
CASE 369–07
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3
0.090
2.3
0.090
1.6
0.063
30
0.1
18
1.8
.070
″
6.7
0.265
″