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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BU808

器件描述:8.0A BRIDGE RECTIFIER
器件厂商:WTE [Won-Top Electronics]
厂商主页:http://www.wontop.com/
文件大小:42.76KB,共3页
Sponsor by e络盟
器件资料摘要:
KBU800 – KBU810 1 of 3 © 2002 Won-Top Electronics
KBU800 – KBU810
8.0A BRIDGE RECTIFIER
Features
! Diffused Junction A
! Low Forward Voltage Drop B C
! High Current Capability D
! High Reliability
! High Surge Current Capability K L
! Ideal for Printed Circuit Boards - ~ ~ + E
! UL Recognized File # E157705

J G
Mechanical Data
! Case: Molded Plastic H
! Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
! Polarity: As Marked on Body
! Weight: 8.0 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
N
P
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
KBU
800
KBU
801
KBU
802
KBU
804
KBU
806
KBU
808
KBU
810
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @T
C
= 100°C IO 8.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM 300 A
Forward Voltage (per element) @I
F
= 4.0A VFM 1.0 V
Peak Reverse Current @T
C
= 25°C
At Rated DC Blocking Voltage @T
C
= 100°C
IR
10
1.0
µA
mA
Rating for Fusing (t < 8.3ms) (Note 1) I
2
t 373 A
2
s
Typical Thermal Resistance (Note 2) RG01JC 7.5 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.
WTE
POWER SEMICONDUCTORS
KBU
Dim Min Max
A 22.70 23.70
B 3.80 4.10
C 4.20 4.70
D 1.70 2.20
E 10.30 11.30
G 4.50 6.80
H 4.60 5.60
J 25.40 —
K — 19.30
L 16.80 17.80
M 6.60 7.10
N 4.70 5.20
P 1.20 1.30
All Dimensions in mm