EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BU808

器件描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
器件厂商:STMICROELECTRONICS [STMicroelectronics]
厂商主页:http://www.st.com/
文件大小:72.24KB,共7页
Sponsor by e络盟
器件资料摘要:
BU808DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON
n STMicroelectronics PREFERRED
SALESTYPE
n NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
n HIGH VOLTAGE CAPABILITY ( > 1400 V )
n HIGH DC CURRENT GAIN ( TYP. 150 )
n U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
n LOW BASE-DRIVE REQUIREMENTS
n DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
n COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.

INTERNAL SCHEMATIC DIAGRAM
June 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 1400 V
VCEO Collector-Emitter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC =0) 5 V
I
C
Collector Current 8 A
I
CM
Collector Peak Current (t
p
<5ms) 10 A
IB Base Current 3 A
I
BM
Base Peak Current (t
p
<5ms) 6 A
P
tot
Total Dissipation at T
c
=25
o
C52W
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
ISOWATT218
1/7