©2000 Fairchild Semiconductor International Rev. A, February 2000
BU806/
807
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BU806
: BU807
400
330
V
V
V
CEO
Collector-Emitter Voltage
: BU806
: BU807
200
150
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 8 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current 2 A
P
C
Collector Dissipation (T
C
=25°C) 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BU806
: BU807

I
C
= 100mA, I
B
= 0 200
150
V
V
I
CES
Collector Cut-off Current
: BU806
: BU807
V
CE
= 400V, V
BE
= 0
V
CE
= 330V, V
BE
= 0
100
100
µA
µA
I
CEV
Collector Cut-off Current
: BU806
: BU807

V
CE
= 400V, V
BE
= -6V
V
CE
= 330V, V
BE
= -6V
100
100
µA
µA
I
EBO
Emitter Cut-off Current V
BE
= 6V, I
C
= 0 3 mA
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 5A, I
B
= 50mA 1.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 5A, I
B
= 50mA 2.4 V

V
F
* Damper Diode Forward Voltage I
F
= 4A 2 V
BU806/807
High Voltage & Fast Switching Darlington
Transistor
Using In Horizontal Output Stages of 110° Crt Video Displays
BUILT-IN SPEED-UP Diode Between Base and Emitter
1.Base 2.Collector 3.Emitter
1
TO-220