BU806
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 NPN DARLINGTONS
a73 LOW BASE-DRIVE REQUIREMENTS
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
a73 HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The devices are silicon epitaxial planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110
o
CRT video displays.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BU806 BU807
V
CBO
Collector-base Voltage (I
E
= 0) 400 330 V
V
CEV
Collector-emitter Voltage (V
BE
= -6V) 400 330 V
V
CEO
Collector-emitter Voltage (I
B
= 0) 200 150 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
IC Collector Current 8 A
I
CM
Collector Peak Current 15 A
IDM Damper Diode Peak Forward Current 10 A
I
B
Base Current 2 A
Ptot Total Power Dissipation at T
case < 25
o
C 60 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max Operating Junction Temperature 150
o
C
1
2
3
TO-220
®
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