©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
BU508AF
TO-3PF
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage 1500 V
V
CEO
Collector-Emitter Voltage 700 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 5 A
I
CP
*Collector Current (Pulse) 15 A
P
C
Collector Dissipation (T
C
=25°C) 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= 100mA, I
B
= 0 700 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10mA, I
C
= 0 5 V

I
CES
Collector Cut-off Current V
CE
= 1500V, V
BE
= 0 1 mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 mA
h
FE
* DC Current Gain V
CE
= 5V, I
C
= 4.5A 2.25
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 4.5A, I
B
= 2A 1 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 4.5A, I
B
= 2A 1.5 V
BU508AF
TV Horizontal Output Applications
1.Base 2.Collector 3.Emitter
1